We theoretically study the nonlinear optical response and photoexcited statesof the Mott insulators. The nonlinear optical susceptibility \chi^(3) iscalculated by using the exact diagonalization technique on small clusters. Fromthe systematic study of the dependence of \chi^(3) on dimensionality, we findthat the spin-charge separation plays a crucial role in enhancing \chi^(3) inthe one-dimensional (1D) Mott insulators. Based on this result, we propose aholon-doublon model, which describes the nonlinear response in the 1D Mottinsulators. These findings show that the spin-charge separation will become akey concept of optoelectronic devices.
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机译：我们从理论上研究了莫特绝缘子的非线性光学响应和光激发态。非线性光磁化率\ chi ^（3）通过使用精确的对角化技术对小簇进行计算。通过对\ chi ^（3）对尺寸的依赖性的系统研究，我们发现自旋电荷分离在增强一维（1D）Mott绝缘子的\ chi ^（3）方面起着至关重要的作用。基于此结果，我们提出了aholon-doublon模型，该模型描述了一维Mottinsulators中的非线性响应。这些发现表明，自旋电荷分离将成为光电器件的关键概念。
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